EpiGaN was founded in 2010 by Marianne Germain, Stefan Degroote and Joff Derluyn, as an Imec spin-off. The company provides solutions for III-nitride epitaxial materials for extreme-performance applications across the globe. EpiGaN gives device manufacturers access to a unique, powerful technology with a proven track record in key market segments, such as power sources, hybrid and electric vehicles, solar-power inverters, RF power for base stations, smart grids etc. In 2011, EpiGaN received a 4-million euro subsidy to build a new factory for the high-volume production of GaN-on-Si epitaxial material, which can play a key role in the development of new-generation power electronics. GaN-on-Si epitaxial material has a much higher performance than the current Si electronics, allowing for a more efficient energy usage.
The consortium behind this investment is made up of Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM. The entire project was concluded in less than six months, within the set deadlines and budget. EpiGaN sells its products all over the world, including in the United States, Europe and Asia, and aims to contribute to the development of high-tech renewable energy solutions.
2011: investments by Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM2011: participation in the EU-FP7 project HiPoSwitch2012: EpiGaN entered ‘Silicon 60’, EE Times' ranking of emerging start-up companies2012: demo of the first 200-mm SiN/AlGaN/GaN HEMT wafers2013: demo of the first 600-V grounded 150-mm wafers2014: National Trends Gazelle Ambassador ‘Starter’, Trends2014: preparation for ISO9001 certification, supporting growth
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