Company Body


EpiGaN was founded in 2010 by Marianne Germain, Stefan Degroote and Joff Derluyn, as an Imec spin-off. The company provides solutions for III-nitride epitaxial materials for extreme-performance applications across the globe. EpiGaN gives device manufacturers access to a unique, powerful technology with a proven track record in key market segments, such as power sources, hybrid and electric vehicles, solar-power inverters, RF power for base stations, smart grids etc. In 2011, EpiGaN received a 4-million euro subsidy to build a new factory for the high-volume production of GaN-on-Si epitaxial material, which can play a key role in the development of new-generation power electronics. GaN-on-Si epitaxial material has a much higher performance than the current Si electronics, allowing for a more efficient energy usage.

The consortium behind this investment is made up of Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM. The entire project was concluded in less than six months, within the set deadlines and budget. EpiGaN sells its products all over the world, including in the United States, Europe and Asia, and aims to contribute to the development of high-tech renewable energy solutions. 

Company Body


2011: investments by Robert Bosch Venture Capital, Capricorn CleanTech Fund and LRM
2011: participation in the EU-FP7 project HiPoSwitch
2012: EpiGaN entered ‘Silicon 60’, EE Times' ranking of emerging start-up companies
2012: demo of the first 200-mm SiN/AlGaN/GaN HEMT wafers
2013: demo of the first 600-V grounded 150-mm wafers
2014: National Trends Gazelle Ambassador ‘Starter’, Trends
2014: preparation for ISO9001 certification, supporting growth


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